![P87PP{QQY]QX)06A@C1IKK3.jpg](/static/picture/1498185457381864.jpg "1498185457381864.jpg")
晶圆，是纯硅（99.9999%）造成的一片片薄薄的圆形硅芯片。
因其状态为圆形，故称为晶圆。
GA黄金甲（NEXTECK）提供的晶圆分成半导体用硅晶圆资料和太阳能电池用硅晶圆资料两种。
半导体用的硅芯片重要集中在4~6 inch，具体的规格如下：
| Items 产品 | General Specification of Semiconductor Wafer | ||||||||
| 4 inch | 5 inch | 6 inch | |||||||
| Resistivity(Ω/cm) 电阻率 | P-Type doped: Boron, 0.001-0.01, 0.01-0.5, >0.5 P++, P+, P- | ||||||||
| N-Type doped: As, Phos, Sb, 0.001-1, 1-150 | |||||||||
| Diameter tolerance(mm) 直径公差 | ±0.2 | ±0.2 | ±0.2 | ||||||
| Orientation 晶向 | (100), (111) | (100), (110), (111) | (100), (110), (111) | ||||||
| Orientation tolerance 晶向公差 | ±0.15° | ±0.15° | ±0.15° | ||||||
| Edge Profile | T/R | T/R | T/R | ||||||
| Edge Condition边缘前提 | 11/22 Ground | 11/22 Ground | 11/22 Ground/Polished | ||||||
| Thickness(μm)厚度 | 300-650 | 400-650 | 550-750 | ||||||
| Thickness tolerance(μm)厚度公差 | ±15 | ±15 | ±15 | ||||||
| Backside Treatment | Etch | Poly | SiO2 | Etch | Poly | SiO2 | Etch | Poly | SiO2 |
| Bow(μm)翘曲度 | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | |||
| Warp(μm)弯曲度 | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | |||
| Options 选项 | Laser marking, Poly-back, SiO2 seal, Back side damage | ||||||||
提供的太阳能级此外晶硅产品可分为单晶硅和多晶硅两种，我们可凭据客户的需要有分歧的规格。通常的规格如下：
| 单晶硅晶圆规格 | 多晶硅晶圆规格 | |
| Category 类型 | 156*156mm（Mono wafer单晶硅) | 156*156mm（Multi wafer多晶硅) |
| Growing method | CZ | |
| Type 种类 | P | P |
| Dopant掺杂物 | Boron硼 | Boron硼 |
| Crystal Orientation晶向 | <100>+/-3 deg | |
| Carbon content含碳量(atom/cm3) | <5*1016 | <5*1017 |
| Oxygen content含氧量(atom/cm3) | <1.1*1018 | <1*1018 |
| Etch Pit Defects(/cm3) | <=3000 | |
| Resistivity电阻率 | 0.5～3/3～6 | 0.5～3 |
| Minority Carrier Lifetime少数载子性命周期(microsecond 微秒(μs) ) | >10 | >=2 |
| Dimension(mm)体积 | 156+/-0.5 | 156+/-0.5 |
| Thickness(μm)厚度 | 200+/-20 | 200+/-20 |
| TTV 平坦度(μm) | <=30 | <=30 |
| Bow/Warp 翘曲度/弯曲度(μm) | <100 | <50 / <100 |
| Surface Saw Damage Depth表表粗糙度(μm) | <=15 | <=20 |
| Edge(Chip)边缘（芯片） | Depth≤0.5mm | Depth≤0.5mm |
| Vertical≤1.0mm | Vertical≤3.0mm | |
| Defect≤2 | Defect≤2 |
GA黄金甲（ NEXTECK ）的各项产品都获得长年的实积和信任。用于半导体及电子零件的各类商标十吩祀全，对应形形色色的成形步骤，拥有优良的成形性与尺寸精确度。